Tokyo, Japan

Hiroyuki Hiramoto


Average Co-Inventor Count = 5.3

ph-index = 4

Forward Citations = 112(Granted Patents)


Company Filing History:


Years Active: 2001-2007

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4 patents (USPTO):Explore Patents

Title: Hiroyuki Hiramoto: Innovator in Insulating Substrate Technology

Introduction

Hiroyuki Hiramoto is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of insulating substrates. With a total of 4 patents to his name, Hiramoto's work has had a substantial impact on the industry.

Latest Patents

Hiramoto's latest patents include innovative designs for insulating substrates and semiconductor devices. One of his notable inventions is an insulating substrate that features insulative ceramic layers arranged one upon another. This substrate includes an intermediate layer made of a different material, which joins the ceramic layers together. The design ensures that even if one ceramic layer experiences breakage due to thermal stress, the remaining layers maintain structural integrity, securing a specified breakdown voltage. Another patent focuses on an insulating substrate with multilevel insulative ceramic layers, emphasizing the same principles of durability and reliability.

Career Highlights

Hiroyuki Hiramoto is currently employed at Kabushiki Kaisha Toshiba, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of insulating substrates, which are critical components in various electronic devices.

Collaborations

Hiramoto has collaborated with notable colleagues, including Toshio Shimizu and Hiroki Sekiya. Their combined expertise has contributed to the successful development of advanced technologies in their field.

Conclusion

Hiroyuki Hiramoto's contributions to insulating substrate technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to enhancing the reliability and performance of semiconductor devices.

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