This inventor holds 2 USPTO granted patents. Top assignees: Tohoku University, Stanley Electric Co., Ltd, Tokyo Denpa Co., Ltd.. Active years: 2008-2010.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:

Years Active: 2008-2010
Title: Inventor Hiroshi Yoneyama: Innovating ZnO-Based Compound Semiconductors
Introduction
Hiroshi Yoneyama, an accomplished inventor from Sawa-gun, Japan, has made significant contributions to the field of semiconductor technology. With a total of two patents to his name, Yoneyama has focused his efforts on developing innovative solutions in the area of ZnO-based compound semiconductors.
Latest Patents
Hiroshi Yoneyama's latest patents revolve around the "Manufacture Method for ZnO-Based Compound Semiconductor Crystal" and "ZnO-Based Compound Semiconductor Substrate." These patents describe a manufacturing method that enables the creation of high-quality ZnO-based compound semiconductor crystals. The process involves preparing a ZnO substrate with a principal surface made up of multiple terraces of (0001) planes, arranged stepwise along the m-axis direction. The principal surface's envelope is inclined relative to the (0001) plane by about 2 degrees or less, allowing for the effective growth of ZnO-based compound semiconductor crystals.
Career Highlights
Throughout his career, Yoneyama has worked with leading companies in the electronics industry. Notably, he has been associated with Stanley Electric Co., Ltd. and Tokyo Denpa Co., Ltd., where he has contributed his expertise in semiconductor technology to advance their research and product development initiatives.
Collaborations
Yoneyama's work has not been solitary; he has collaborated with prominent colleagues such as Hiroyuki Kato and Michihiro Sano. These collaborations have fostered an environment of innovation and have allowed for the exchange of ideas, propelling advancements in semiconductor research.
Conclusion
Hiroshi Yoneyama is a notable figure in the field of semiconductor innovation. His patents on ZnO-based compound semiconductor manufacturing methods reflect his commitment to enhancing the quality and efficiency of semiconductor production. As the industry continues to evolve, Yoneyama’s work will likely play a pivotal role in shaping future advancements in semiconductor technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile