Hyogo, Japan

Hiroshi Uematsu

This inventor holds 1 USPTO granted patent. Top assignee: Nohken Inc.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Uematsu. Retrieved from https://idiyas.com/inventor/hiroshi-uematsu-makkbyuw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 43(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Hiroshi Uematsu and His Patent for a Stable Level Sensor.

Introduction

Hiroshi Uematsu is an inventor associated with Nohken Inc. in Hyogo, Japan. His patent work includes a level-sensing method designed to improve the stability and accuracy of measurements.

Latest Patents

Uematsu’s listed patent, “Level sensor,” describes a system that measures capacitance between adjacent electrodes before measuring the capacitance of the object being monitored. The initial readings are stored and averaged, and correction values are calculated from the differences between each reading and the average. The system then applies these corrections to actual measurements. By accounting for variations such as floating items, the method supports more stable and accurate level measurement. Uematsu is associated with 1 patent.

Career Highlights

Uematsu’s patent reflects work on sensor technology and measurement reliability. The disclosed approach uses adjacent-electrode capacitance readings as a reference for correcting measurements of the monitored object.

Collaborations

Hiroshi Kawakatsu and Kouichi Tanaka are identified as Uematsu’s coworkers. The available information does not specify their roles in developing the level-sensor patent.

Conclusion

Hiroshi Uematsu’s level-sensor patent describes a capacitance-based correction method intended to make level measurements more stable and accurate.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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