Company Filing History:
Years Active: 2010
Title: Hiroshi Sato: Innovator in Semiconductor Technology
Introduction
Hiroshi Sato is a prominent inventor based in Santa Barbara, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in enhancing the growth of nitride semiconductor thin films.
Latest Patents
Hiroshi Sato holds a patent titled "Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition." This innovative method focuses on improving the growth of device-quality planar semipolar nitride semiconductor thin films through metalorganic chemical vapor deposition (MOCVD). The process involves loading a substrate into a reactor, heating it under a flow of nitrogen, hydrogen, or ammonia, depositing an InGaN nucleation layer, and subsequently cooling the substrate under nitrogen overpressure. He has 1 patent to his name.
Career Highlights
Hiroshi Sato is affiliated with the University of California, where he continues to advance research in semiconductor technologies. His work has been instrumental in developing methods that enhance the quality and efficiency of semiconductor materials.
Collaborations
Some of his notable coworkers include John F. Kaeding and Michael Iza. Their collaborative efforts have contributed to the advancement of semiconductor research and development.
Conclusion
Hiroshi Sato's innovative work in semiconductor technology exemplifies the impact of research and development in enhancing device-quality materials. His contributions continue to influence the field significantly.
Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.