The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Jan. 19, 2007
Hiroshi Sato, Santa Barbara, CA (US);
John F. Kaeding, Goleta, CA (US);
Michael Iza, Santa Barbara, CA (US);
Troy J. Baker, Santa Barbara, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Hiroshi Sato, Santa Barbara, CA (US);
John F. Kaeding, Goleta, CA (US);
Michael Iza, Santa Barbara, CA (US);
Troy J. Baker, Santa Barbara, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InGaN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InGaN nucleation layer, and cooling the substrate under a nitrogen overpressure.