Okazaki, Japan

Hiroshi Otsuki

This inventor holds 1 USPTO granted patent. Top assignee: Denso Corporation. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Otsuki. Retrieved from https://idiyas.com/inventor/hiroshi-otsuki-56vq86jz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Hiroshi Otsuki: Innovator in Semiconductor Technology

Introduction

Hiroshi Otsuki is a notable inventor based in Okazaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the measurement of oxide film thickness.

Latest Patents

Otsuki holds a patent for a method for measuring the thickness of an oxide film. This innovative technique is crucial in the manufacturing process of semiconductor devices. After the formation of a gate oxide film, the thickness is measured by determining an exposure period, which is defined from the time the oxide film is formed to the time the thickness is measured. If necessary, the measurement can be corrected to ascertain the real thickness based on the exposure period. This method ensures accurate measurement of the gate oxide film thickness.

Career Highlights

Hiroshi Otsuki is associated with Denso Corporation, a leading company in the automotive technology sector. His work has been instrumental in enhancing the precision of semiconductor manufacturing processes.

Collaborations

Otsuki has collaborated with notable colleagues, including Atsushi Komura and Hisato Kato, contributing to advancements in their field.

Conclusion

Hiroshi Otsuki's innovative approach to measuring oxide film thickness has made a significant impact on semiconductor manufacturing. His contributions continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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