Gunma, Japan

Hiroshi Onodera


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 103(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Hiroshi Onodera: Pioneer in Insulated Gate Field Effect Transistor Technology

Introduction

Hiroshi Onodera is a renowned inventor based in Gunma, Japan. With a strong focus on semiconductor technology, he has made significant contributions to the field through his innovative patents. His expertise lies particularly in the development of insulated gate field effect transistors (IGFETs), which are crucial components in modern electronic devices.

Latest Patents

Hiroshi holds a notable patent for an insulated gate field effect transistor with a buried layer. This invention features a design fabricated within a single conductivity type semiconductor substrate. It involves a source region and a drain region that are positioned apart, delineating a channel region in between. A key aspect of this patent is the incorporation of a deep ion implantation region located in the lower portion of the channel. This configuration allows the depletion region of the channel to extend towards the source region, a breakthrough that enhances device performance significantly.

Career Highlights

Currently, Hiroshi Onodera is employed at Sanyo Electric Co., Ltd., a distinguished company recognized for its advancements in electrical and electronic equipment. His continuous work in the field has further solidified his reputation as an influential inventor. Throughout his career, he has demonstrated a commitment to innovation and excellence in semiconductor technology.

Collaborations

Hiroshi has collaborated with notable coworkers, including Masanori Nishida and Masashige Aoyama. Their joint efforts have contributed to the development and refinement of semiconductor technologies, enabling breakthroughs that have advanced the industry significantly.

Conclusion

Hiroshi Onodera's contributions to the field of insulated gate field effect transistors reflect a blend of innovation and practical application. His patent stands as a testament to his skill and vision as an inventor. Through his work at Sanyo Electric Co., Ltd. and collaborations with other talented individuals, Hiroshi continues to influence the electronics industry with cutting-edge solutions that push the boundaries of technology.

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