Kasugai, Japan

Hiroshi Ohtsuki

This inventor holds 1 USPTO granted patent. Top assignee: Nippondenso Co., Ltd.. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Ohtsuki. Retrieved from https://idiyas.com/inventor/hiroshi-ohtsuki-o2eb6lfh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1996

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Hiroshi Ohtsuki: Innovator in Protective Film Technology

Introduction

Hiroshi Ohtsuki is a notable inventor based in Kasugai, Japan. He has made significant contributions to the field of protective film technology. His innovative work has led to the development of a unique device protecting film that incorporates advanced materials and processes.

Latest Patents

Hiroshi Ohtsuki holds 1 patent for a device protecting film that features a UV transmissible SiN film. This film is created through a plasma CVD process, ensuring that the composition ratio of Si/N falls within the range of 0.75 to 0.87. Additionally, the Si--H bond concentration in the SiN film is optimized according to a specific formula, enhancing its protective capabilities.

Career Highlights

Ohtsuki is currently employed at Nippondenso Co., Ltd., where he continues to innovate and develop new technologies. His work has been instrumental in advancing the applications of protective films in various industries.

Collaborations

Throughout his career, Hiroshi Ohtsuki has collaborated with esteemed colleagues such as Fumio Ohara and Shoji Toyoshima. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Hiroshi Ohtsuki's contributions to protective film technology exemplify the spirit of innovation. His work not only enhances product performance but also sets a benchmark for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…