This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1988.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1988
Title: Hiroshi Jwahashi: Innovator in Semiconductor Technology
Introduction
Hiroshi Jwahashi is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance of integrated circuits.
Latest Patents
Hiroshi Jwahashi holds a patent for a semiconductor integrated circuit. This invention includes a MOS transistor and a transistor circuit, where one end of a current path is connected to the drain of the MOS transistor. The transistor circuit has an avalanche breakdown voltage that is lower than the breakdown voltage of the MOS transistor. This innovation is crucial for improving the efficiency and reliability of semiconductor devices.
Career Highlights
Hiroshi Jwahashi is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to focus on advancing semiconductor technologies. His contributions have been instrumental in the development of high-performance electronic components.
Collaborations
Hiroshi Jwahashi has collaborated with talented individuals such as Hiroshi Harada and Hideki Sumihara. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Hiroshi Jwahashi's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patent and collaborative efforts continue to influence advancements in this critical field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile