Hiroshi Isomura

Title: Hiroshi Isomura: Innovator in Silicon Crystal Production

Introduction

Hiroshi Isomura is a notable inventor from Kumage-gun, Japan. He is recognized for his significant contributions to the field of materials science, particularly in the production of silicon single crystals. His innovative methods have paved the way for advancements in semiconductor technology.

Latest Patents

Hiroshi Isomura holds a patent for a "Method for production of dislocation-free silicon single crystal." This invention focuses on a technique for producing a dislocation-free silicon single crystal using the Czochralski method. The process involves immersing a seed crystal in a silicon melt and pulling it without necking. The seed crystal utilized is a dislocation-free silicon single crystal, ensuring high-quality growth. The method specifies that the horizontal maximum length of the immersed part of the seed crystal must be at least 5 mm, with an immersing rate not exceeding 2.8 mm/min.

Career Highlights

Throughout his career, Hiroshi Isomura has worked with prominent companies such as Nippon Steel Corporation and NSC Electron Corporation. His experience in these organizations has contributed to his expertise in the field of silicon crystal production.

Collaborations

Hiroshi Isomura has collaborated with notable colleagues, including Toshio Iwasaki and Shin-ichi Fujimoto. Their joint efforts have further advanced the research and development of silicon crystal technologies.

Conclusion

Hiroshi Isomura's innovative methods in silicon crystal production have made a significant impact on the semiconductor industry. His patent and collaborations reflect his dedication to advancing materials science.