Isehara, Japan

Hiroshi Inokawa

This inventor holds 3 USPTO granted patents. Top assignee: Nippon Telegraph and Telephone Corporation. Active years: 1993-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Inokawa. Retrieved from https://idiyas.com/inventor/hiroshi-inokawa-8chysw74

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 3

Forward Citations = 29(Granted Patents)


Location History:

  • Zama, JP (1993)
  • Isehara, JP (1995 - 1996)

Company Filing History:


Years Active: 1993-1996

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3 patents (USPTO):Explore Patents

Title: Hiroshi Inokawa: Innovator in Semiconductor Technology

Introduction

Hiroshi Inokawa is a prominent inventor based in Isehara, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and efficiency of complementary metal-insulator-semiconductor (CMOS) devices.

Latest Patents

Inokawa's latest patents include innovative methods for fabricating semiconductor devices. One of his notable patents describes a method for creating polysilicon gates for complementary-type field-effect semiconductor devices. This method involves forming gates from polysilicon that is simultaneously doped with impurities during deposition. The dual N.sup.+ /P.sup.+ polysilicon gate structure enhances the off-characteristic, reduces the short channel effect, and improves the controllability of threshold voltage. Specifically, N- and P-channel MISFETs are developed on a common semiconductor substrate, utilizing N-type and P-type polysilicon as gate electrodes, respectively. A narrow region is also included to prevent the mutual diffusion of impurities between the polysilicon portions.

Another significant patent by Inokawa outlines a similar method for fabricating CMOS semiconductor devices, emphasizing the same dual gate structure and its benefits for transistor performance.

Career Highlights

Hiroshi Inokawa is currently employed at Nippon Telegraph and Telephone Corporation, where he continues to advance semiconductor technology. His expertise in the field has led to numerous innovations that have impacted the industry.

Collaborations

Inokawa has collaborated with notable colleagues, including Toshio Kobayashi and Takashi Morimoto. Their combined efforts have contributed to the development of cutting-edge semiconductor technologies.

Conclusion

Hiroshi Inokawa's work in semiconductor technology exemplifies innovation and dedication to improving device performance. His patents reflect a deep understanding of the complexities involved in semiconductor fabrication, making him a key figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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