Sendai, Japan

Hiroshi Hyodo

This inventor holds 1 USPTO granted patent. Top assignee: Tohoku University. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Hyodo. Retrieved from https://idiyas.com/inventor/hiroshi-hyodo-8dsl7yu4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Hiroshi Hyodo: Innovator in Battery Technology

Introduction

Hiroshi Hyodo is a notable inventor based in Sendai, Japan. He has made significant contributions to the field of battery technology, particularly through his innovative designs and concepts. His work is recognized for its potential impact on electronic devices.

Latest Patents

Hiroshi Hyodo holds a patent for a battery and electronic device. The patent describes a battery that includes a main body with a space inside, featuring a channel that communicates between the outside and the space. It also includes a pair of electrodes adjoining the space and a valve that closes the channel in response to pH levels. This invention showcases his ability to integrate chemical principles into practical applications.

Career Highlights

Hyodo is affiliated with Tohoku University, where he continues to advance his research and development in battery technology. His academic background and ongoing projects contribute to the university's reputation as a leader in technological innovation.

Collaborations

Hiroshi Hyodo has collaborated with notable colleagues, including Itaru Honma and Shinya Yoshida. These partnerships enhance the scope of his research and foster a collaborative environment for innovation.

Conclusion

Hiroshi Hyodo's contributions to battery technology exemplify the intersection of scientific research and practical application. His innovative patent and collaborations highlight his role as a key figure in advancing electronic device technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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