Tokushima, Japan

Hironori Takagi


 

Average Co-Inventor Count = 7.0

ph-index = 3

Forward Citations = 233(Granted Patents)


Company Filing History:


Years Active: 2007-2011

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3 patents (USPTO):Explore Patents

Title: Hironori Takagi: Innovator in Nitride Semiconductor Technology

Introduction

Hironori Takagi is a prominent inventor based in Tokushima, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor devices. With a total of 3 patents to his name, Takagi's work has paved the way for advancements in luminous output and device performance.

Latest Patents

One of Takagi's latest patents focuses on a nitride semiconductor device that features an active layer made of a multiple quantum well structure. This innovative design enhances the performance of the multiple quantum well structure, leading to intensified luminous output. The device comprises an n-region and a p-region, each containing multiple nitride semiconductor films, with an active layer interposed between them. A multi-film layer with two types of nitride semiconductor films is formed in at least one of the n-region or the p-region, contributing to the expanded application of the nitride semiconductor device.

Career Highlights

Hironori Takagi is associated with Nichia Corporation, a leading company in the field of semiconductor technology. His work at Nichia has been instrumental in advancing the capabilities of nitride semiconductor devices, making them more efficient and versatile.

Collaborations

Throughout his career, Takagi has collaborated with notable colleagues, including Koji Tanizawa and Tomotsugu Mitani. These collaborations have further enriched his research and development efforts in the semiconductor industry.

Conclusion

Hironori Takagi's contributions to nitride semiconductor technology exemplify his innovative spirit and dedication to advancing the field. His patents and work at Nichia Corporation continue to influence the development of efficient semiconductor devices.

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