The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Mar. 10, 1999
Koji Tanizawa, Tokushima, JP;
Tomotsugu Mitani, Tokushima, JP;
Yoshinori Nakagawa, Tokushima, JP;
Hironori Takagi, Tokushima, JP;
Hiromitsu Marui, Tokushima, JP;
Yoshikatsu Fukuda, Tokushima, JP;
Takeshi Ikegami, Tokushima, JP;
Koji Tanizawa, Tokushima, JP;
Tomotsugu Mitani, Tokushima, JP;
Yoshinori Nakagawa, Tokushima, JP;
Hironori Takagi, Tokushima, JP;
Hiromitsu Marui, Tokushima, JP;
Yoshikatsu Fukuda, Tokushima, JP;
Takeshi Ikegami, Tokushima, JP;
Nichia Corporation, Tokushima, JP;
Abstract
According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.