Tokushima, Japan

Hiromitsu Marui

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 7.0

ph-index = 3

Forward Citations = 233(Granted Patents)


Company Filing History:


Years Active: 2007-2011

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3 patents (USPTO):Explore Patents

Title: Hiromitsu Marui: Innovator in Nitride Semiconductor Technology

Introduction

Hiromitsu Marui is a prominent inventor based in Tokushima, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor devices. With a total of 3 patents to his name, Marui's work has had a substantial impact on the industry.

Latest Patents

One of Marui's latest patents focuses on a nitride semiconductor device that features an active layer made of a multiple quantum well structure. This innovative design enhances the performance of the multiple quantum well structure, leading to increased luminous output. The device comprises an n-region and a p-region, each containing multiple nitride semiconductor films, with an active layer positioned between them. A multi-film layer, consisting of two types of nitride semiconductor films, is formed in at least one of the n-region or p-region, further optimizing the device's functionality.

Career Highlights

Hiromitsu Marui is currently associated with Nichia Corporation, a leading company in the field of semiconductor technology. His work at Nichia has allowed him to push the boundaries of innovation in nitride semiconductors, contributing to advancements that benefit various applications.

Collaborations

Marui has collaborated with notable colleagues, including Koji Tanizawa and Tomotsugu Mitani. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and expertise, further enhancing the quality of their innovations.

Conclusion

Hiromitsu Marui's contributions to nitride semiconductor technology exemplify the spirit of innovation in the field. His patents and collaborations continue to influence the industry, paving the way for future advancements.

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