Aichi, Japan

Hiromitsu Yoshiyama

This inventor holds 4 USPTO granted patents. Top assignee: Kabushiki Kaisha Toyoda Jidoshokki Seisakusho. Active years: 2001-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiromitsu Yoshiyama. Retrieved from https://idiyas.com/inventor/hiromitsu-yoshiyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 3

Forward Citations = 73(Granted Patents)


Location History:

  • Kariya, JP (2001)
  • Aichi-ken, JP (2002)
  • Aichi, JP (2002 - 2003)

Company Filing History:


Years Active: 2001-2003

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4 patents (USPTO):Explore Patents

Title: Hiromitsu Yoshiyama: Innovator in Semiconductor Technology

Introduction

Hiromitsu Yoshiyama is a prominent inventor based in Aichi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His innovative work has paved the way for advancements in electronic components and systems.

Latest Patents

Yoshiyama's latest patents include a semiconductor module that features a plurality of semiconductor chips mounted on a base substrate. In this design, the drain region of each semiconductor chip is directly connected to the base substrate. Additionally, a source electrode is formed parallel to the arrangement of the semiconductor chips, with bonding wires connecting the source region of each chip to the source electrode. This configuration allows for a plurality of source and drain terminals to be closely located, enhancing the efficiency of the module.

Another notable patent involves a semiconductor module where multiple MOS transistors are arranged on the top surface of a conductor substrate, which serves as a drain electrode. Each MOS transistor's drain contact is connected to the conductor substrate, while the source contact is linked to an output conductor path through bonding wires. The gate contact is also connected to a drive signal conductor path via bonding wires. This innovative design interconnects the source contacts of the MOS transistors through a bridge electrode and bonding wires, further optimizing performance.

Career Highlights

Hiromitsu Yoshiyama is currently employed at Kabushiki Kaisha Toyoda Jidoshokki Seisakusho, a company known for its advancements in automotive technology and manufacturing. His work at this organization has allowed him to collaborate with other talented professionals in the field.

Collaborations

Yoshiyama has worked alongside notable colleagues such as Kenichi Sofue and Toshinari Fukatsu. Their combined expertise has contributed to the successful development of innovative semiconductor technologies.

Conclusion

Hiromitsu Yoshiyama's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic components, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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