Atsugi, Japan

Hiromi Nowatari

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiromi Nowatari. Retrieved from https://idiyas.com/inventor/hiromi-nowatari-t3xl911p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hiromi Nowatari and Her Light-Emitting Element Patent.

Introduction

Hiromi Nowatari is an inventor based in Atsugi, Japan, associated with Semiconductor Energy Laboratory Co., Ltd. Her listed patent concerns a light-emitting element designed to provide high luminance at low voltage and a long operating lifetime.

Latest Patents

Nowatari is listed as an inventor on 1 patent: “Light-emitting element, light-emitting device, electronic device, and lighting device.” The invention describes a structure with two or more electroluminescent layers between an anode and a cathode. Between adjacent electroluminescent layers, it places three layers containing donor materials, electron-transport material, hole-transport material, and an acceptor material. The arrangement is intended to support efficient light emission while maintaining device longevity.

Career Highlights

The available information identifies Nowatari’s work in light-emitting technology and her association with Semiconductor Energy Laboratory Co., Ltd. Her patent addresses the design of light-emitting elements and related devices, including electronic and lighting devices.

Collaborations

The patent record connects Nowatari’s invention with Semiconductor Energy Laboratory Co., Ltd. The provided information does not specify additional collaborators.

Conclusion

Hiromi Nowatari’s listed patent focuses on a layered light-emitting element intended to combine high luminance at low voltage with a long lifetime.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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