Nara, Japan

Hiromi Hattori

This inventor holds 1 USPTO granted patent. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiromi Hattori. Retrieved from https://idiyas.com/inventor/hiromi-hattori

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Hiromi Hattori: Innovator in Semiconductor Manufacturing

Introduction

Hiromi Hattori is a notable inventor based in Nara, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative approach has led to the development of a unique method that enhances the production of semiconductor devices.

Latest Patents

Hattori holds a patent for a method for manufacturing a semiconductor device comprising titanium. This method involves forming a titanium or titanium compound film through a chemical vapor deposition (CVD) process. The process utilizes a material gas that contains an organic titanium compound, which is crucial for the effective production of semiconductor devices.

Career Highlights

Hattori is associated with Sharp Kabushiki Kaisha Corporation, where he has been able to apply his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Some of his notable coworkers include Kazuyo Nakamura and Keiichiro Uda. Their collaboration has fostered an environment of innovation and creativity within the company.

Conclusion

Hiromi Hattori's contributions to semiconductor manufacturing exemplify the impact of innovative thinking in technology. His patent and work at Sharp Kabushiki Kaisha Corporation highlight the importance of advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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