Atsugi, Japan

Hiroki Komagata

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroki Komagata. Retrieved from https://idiyas.com/inventor/hiroki-komagata-w72q77t2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hiroki Komagata: Innovator in Semiconductor Technology

Introduction

Hiroki Komagata is a prominent inventor based in Atsugi, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Hiroki Komagata holds a patent for a semiconductor device and method for manufacturing a semiconductor device. This invention aims to provide a semiconductor device with less variation in transistor characteristics. The device includes a semiconductor film, a pair of blocking films over the semiconductor film, and an insulating film positioned between the pair of blocking films. The semiconductor film consists of a pair of n-type regions and an i-type region located between the n-type regions. Notably, the n-type regions overlap with the blocking films, while the i-type region overlaps with the insulating film. This design enhances the performance and reliability of semiconductor devices.

Career Highlights

Hiroki Komagata is associated with Semiconductor Energy Laboratory Co., Ltd., where he continues to advance semiconductor technology. His work has been instrumental in developing devices that meet the growing demands of modern electronics.

Collaborations

Hiroki collaborates with Hiromi Sawai, contributing to innovative projects within the semiconductor industry.

Conclusion

Hiroki Komagata's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence in the field. His work continues to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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