This inventor holds 4 USPTO granted patents and 5 published patent applications. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Hiroki Inoue - Innovator in Memory Device Technology
Introduction
Hiroki Inoue is an inventor based in Atsugi, Japan. He is known for his innovative work in the field of memory devices. His contributions focus on creating highly integrated memory solutions that enhance performance and efficiency.
Latest Patent Applications
Hiroki Inoue has filed a patent application for a MEMORY DEVICE. This memory device includes a first transistor and a second transistor positioned over the first transistor. The first transistor features a first oxide semiconductor over a substrate, along with a first conductor and a second conductor that are separated from each other. A first insulator is placed over the conductors, containing an opening that overlaps with the region between them. Additionally, a second insulator is positioned in the opening of the first insulator and over the first oxide semiconductor, while a third conductor is situated in the opening and over the second insulator. The second transistor comprises a third insulator positioned over the first insulator and the third conductor, which also includes an opening. A fourth conductor is placed over the third insulator, featuring an opening that overlaps with the opening of the third insulator. A second oxide semiconductor is positioned in the openings of the third insulator and the fourth conductor, along with a fourth insulator placed in the opening and over the second oxide semiconductor. Finally, a fifth conductor is positioned in the opening and over the fourth insulator. Part of the second oxide semiconductor passes through the third insulator and is electrically connected to the third conductor.
Conclusion
Hiroki Inoue is an emerging inventor in the field of memory device technology, with a focus on creating innovative solutions that push the boundaries of integration and efficiency. His work has the potential to significantly impact the future of memory devices.