Nisshin, Japan

Hiroki Hoshizaki


Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1999-2001

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3 patents (USPTO):Explore Patents

Title: Hiroki Hoshizaki: Innovator in Semiconductor Technology

Introduction

Hiroki Hoshizaki is a prominent inventor based in Nisshin, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advancing the capabilities of superconductive materials, which are essential for various high-tech applications.

Latest Patents

Hoshizaki's latest patents include a novel mounting structure for semiconductor devices and a method for forming high critical temperature (tc) superconductive thin films. The latter patent details a sophisticated process for creating superconductive thin films with enhanced properties. This method involves multiple steps, including the deposition of thin film layers and the controlled introduction of oxygen, ultimately achieving a film thickness that meets predetermined specifications.

Career Highlights

Hoshizaki is associated with Advanced Mobile Telecommunication Technology Inc., where he applies his expertise in semiconductor technology. His innovative approaches have positioned him as a key figure in the development of advanced materials that can significantly impact telecommunications and other industries.

Collaborations

Hoshizaki has worked alongside notable colleagues such as Masashi Fuse and Nobuyoshi Sakakibara. Their collaborative efforts have contributed to the advancement of semiconductor technologies and the exploration of new applications.

Conclusion

Hiroki Hoshizaki's contributions to semiconductor technology and his innovative patents reflect his commitment to advancing the field. His work continues to influence the development of high-performance materials that are crucial for modern technology.

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