Kanagawa, Japan

Hirokazu Katsuyama


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Hirokazu Katsuyama: Innovator in Semiconductor Technology

Introduction

Hirokazu Katsuyama is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Katsuyama holds a patent for a method of manufacturing a semiconductor device. This device includes an insulating film formed using a cyclic siloxane with a six-membered ring structure as a raw material. The design features a trench formed in the insulating film and an interconnect configured by a metal film embedded in the trench. Notably, a modified layer is created on the bottom surface of the trench, where the number of carbon and/or nitrogen atoms per unit volume exceeds that within the insulating film. This innovation enhances the performance and reliability of semiconductor devices.

Career Highlights

Katsuyama is associated with Renesas Electronics Corporation, a leading company in semiconductor solutions. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

Katsuyama has collaborated with notable colleagues, including Daisuke Oshida and Ippei Kume, contributing to the development of cutting-edge semiconductor technologies.

Conclusion

Hirokazu Katsuyama's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of modern electronic devices.

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