The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jul. 14, 2011
Daisuke Oshida, Kanagawa, JP;
Ippei Kume, Kanagawa, JP;
Makoto Ueki, Kanagawa, JP;
Manabu Iguchi, Kanagawa, JP;
Naoya Inoue, Kanagawa, JP;
Takuya Maruyama, Kanagawa, JP;
Toshiji Taiji, Kanagawa, JP;
Hirokazu Katsuyama, Kanagawa, JP;
Daisuke Oshida, Kanagawa, JP;
Ippei Kume, Kanagawa, JP;
Makoto Ueki, Kanagawa, JP;
Manabu Iguchi, Kanagawa, JP;
Naoya Inoue, Kanagawa, JP;
Takuya Maruyama, Kanagawa, JP;
Toshiji Taiji, Kanagawa, JP;
Hirokazu Katsuyama, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
The semiconductor device includes an insulating film that is formed using a cyclic siloxane having a six-membered ring structure as a raw material; a trench that is formed in the insulating film; and a interconnect that is configured by a metal film embedded in the trench. In the semiconductor device, a modified layer is formed on a bottom surface of the trench, in which the number of carbon atoms and/or the number of nitrogen atoms per unit volume is larger than that inside the insulating film.