Location History:
- Kanonji, JP (2012)
- Kagawa, JP (2017)
Company Filing History:
Years Active: 2012-2017
Title: Hirokazu Fujiwara: Innovator in Semiconductor Technology
Introduction
Hirokazu Fujiwara is a prominent inventor based in Kagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of materials that enhance the quality of semiconductor crystals. With a total of 2 patents to his name, Fujiwara's work is recognized for its innovative approach and practical applications.
Latest Patents
Fujiwara's latest patents include a novel susceptor designed to produce high-quality silicon carbide (SiC) semiconductor crystals. This invention ensures that the silicon and carbon concentrations around the wafer remain constant, thereby preventing particle generation. The susceptor is made of graphite covered with silicon carbide, with specific sections made of tantalum carbide or graphite material coated with tantalum carbide. Additionally, he has developed a tantalum carbide-coated carbon material that exhibits excellent corrosion resistance to reducing gases and thermal shock resistance at high temperatures. This material consists of a carbon substrate with a coating film of densely aggregated fine crystals of tantalum carbide.
Career Highlights
Fujiwara is currently associated with Toyo Tanso Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the materials used in semiconductor manufacturing, contributing to the industry's growth and innovation.
Collaborations
Fujiwara has collaborated with notable colleagues, including Ichiro Fujita and Norimasa Yamada. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Hirokazu Fujiwara's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the field. His work continues to influence the development of high-quality semiconductor materials, paving the way for future advancements.