The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2017

Filed:

Jul. 01, 2005
Applicants:

Ichiro Fujita, Kagawa, JP;

Hirokazu Fujiwara, Kagawa, JP;

Inventors:

Ichiro Fujita, Kagawa, JP;

Hirokazu Fujiwara, Kagawa, JP;

Assignee:

TOYO TANSO CO., LTD., Osaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/225 (2006.01); C23C 16/458 (2006.01); C30B 25/12 (2006.01); C30B 29/36 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
G01N 23/2258 (2013.01); C23C 16/4581 (2013.01); C30B 25/12 (2013.01); C30B 29/36 (2013.01); H01L 21/68757 (2013.01);
Abstract

The invention provides a susceptor capable of obtaining high-quality SiC semiconductor crystals by keeping the Si concentration and C concentration around a wafer constant and by preventing the generation of particles. A susceptor of graphite covered with silicon carbide is characterized in that at least one section of a part on which a wafer is placed is tantalum carbide or a graphite material covered with tantalum carbide. The part on which the wafer is placed may be a detachable member. A material around the part on which the wafer is placed may be a detachable graphite material covered with silicon carbide.


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