Higashimurayama, Japan

Hirohisa Usuami


Average Co-Inventor Count = 5.8

ph-index = 2

Forward Citations = 77(Granted Patents)


Location History:

  • Fuchu, JP (1991)
  • Higashimurayama, JP (1997)

Company Filing History:


Years Active: 1991-1997

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2 patents (USPTO):Explore Patents

Title: Hirohisa Usuami: Innovator in Semiconductor Technology

Introduction

Hirohisa Usuami is a notable inventor based in Higashimurayama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on processes and apparatuses that enhance the fabrication of semiconductor integrated circuits.

Latest Patents

Usuami's latest patents include a process for fabricating a semiconductor integrated circuit device. This process involves forming an upper-layer fin and a lower-layer fin of a storage electrode. The method utilizes a dry-etching technique with two-layered polycrystalline silicon films, ensuring that the upper-layer fin is patterned to meet the minimum working size of memory cells in DRAM technology. Additionally, he has developed a plasma processing apparatus that includes a microwave generator and a plasma processing chamber. This apparatus is designed to generate plasma for effective substrate processing.

Career Highlights

Throughout his career, Hirohisa Usuami has worked with prominent companies such as Hitachi, Ltd. and Hitachi ULSI Engineering Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to various innovative projects.

Collaborations

Usuami has collaborated with notable colleagues, including Toru Otsubo and Mitsuo Tokuda. These partnerships have further enriched his work and expanded the impact of his inventions in the semiconductor industry.

Conclusion

Hirohisa Usuami's contributions to semiconductor technology through his patents and career achievements highlight his role as an influential inventor. His innovative processes and apparatuses continue to shape advancements in the field.

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