Hitachi, Ltd.

Hitachi Ulsi Engineering Corp.

Hirohisa Usuami

Masayuki Kojima

Kazuo Nojiri

Toru Otsubo

Kazuyuki Tsunokuni

Junzou Azuma

Mitsuo Tokuda

Keiji Okamoto

Yasuhiro Yamaguchi

Ichirou Sasaki

Kazuhiro Ohara

A process for forming an upper-layer fin and a lower-layer fin of a storage electrode, and a semiconductor integrated circuit device fabricated by the process. When two-layered polycrystalline silicon films are to be sequentially etched to form the upper-layer fin and the lower-layer fin by the dry-etching method using a first mask, the upper polycrystalline silicon film is patterned at first so far as to form the clearance of the upper-layer fins with the minimum working size of the memory cells of a DRAM, to form the upper-layer fin. Next, the lower-layer fin is formed by the dry-etching method using a second mask which has a pattern enlarged in self-alignment from the pattern of the first mask, so that it is given a larger horizontal size than that of the upper-layer fin.

Process for fabricating a semiconductor integrated circuit device having

A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber. A slot plate functioning as an antenna is disposed in the cavity resonator in opposition to a surface of the substrate for enabling radiation of the resonated microwaves to the plasma processing chamber through the separation plate, the slot plate including at least one set of circumferentially extending slots for enabling radiation of resonated microwaves.

Apparatus for plasma processing

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Higashimurayama, Japan

Hirohisa Usuami