Nagoya, Japan

Hirofumi Hazama

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 3.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Nagoya, JP (2013 - 2015)
  • Nagakute, JP (2018)

Company Filing History:


Years Active: 2013-2018

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3 patents (USPTO):Explore Patents

Title: Hirofumi Hazama - Innovator in Compound Semiconductors

Introduction

Hirofumi Hazama is an inventor based in Nagoya-shi, Japan. He is known for his work in the field of compound semiconductors. Although he currently holds no granted patents, his innovative ideas contribute to the advancement of technology.

Latest Patent Applications

Hirofumi Hazama's notable patent application is for a compound semiconductor. This compound semiconductor contains main constituent elements that satisfy specific relationships, including (CuA)(ZnB)(SnC)(SnSe) and having a CZTSX-based compound as a main phase. The application outlines various parameters for the elements A, B, C, and D, ensuring a comprehensive approach to semiconductor development. The application also specifies exclusions for certain compounds, highlighting the precision of his work.

Conclusion

Hirofumi Hazama's contributions to the field of compound semiconductors reflect his innovative spirit and dedication to advancing technology. His patent application showcases his expertise and potential for future developments in this area.

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