The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Aug. 07, 2013
Applicant:
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute-shi, Aichi-ken, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 31/0224 (2006.01); H01L 31/032 (2006.01); H01L 31/0392 (2006.01); H01L 31/072 (2012.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022425 (2013.01); H01L 31/0326 (2013.01); H01L 31/03923 (2013.01); H01L 31/072 (2013.01); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01);
Abstract
An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.