Yokohama, Japan

Hiroe Ishihara

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Sdi., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroe Ishihara. Retrieved from https://idiyas.com/inventor/hiroe-ishihara-lqsxlfu6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Hiroe Ishihara: Innovator in All-Solid-State Battery Technology

Introduction

Hiroe Ishihara is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of battery technology, particularly in the development of all-solid-state batteries. Her innovative work is paving the way for advancements in energy storage solutions.

Latest Patents

Hiroe Ishihara holds a patent for an all-solid-state battery. This invention features a stacked all-solid-state secondary battery design, where multiple battery units, each consisting of a positive electrode layer, a solid electrolyte layer, and a negative electrode layer, are arranged in a sequential manner. A buffer layer is formed between adjacent battery units, enhancing the overall performance and stability of the battery.

Career Highlights

Ishihara is currently employed at Samsung SDI, Ltd., where she continues to push the boundaries of battery technology. Her work is instrumental in the development of next-generation energy storage systems that are safer and more efficient.

Collaborations

Throughout her career, Hiroe has collaborated with notable colleagues, including Yuichi Aihara and Taku Watanabe. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Hiroe Ishihara's contributions to all-solid-state battery technology exemplify her dedication to advancing energy storage solutions. Her innovative spirit and collaborative efforts are shaping the future of battery technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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