Tokyo, Japan

Hirobumi Minegishi

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Hirobumi Minegishi: Innovator in Semiconductor Technology

Introduction

Hirobumi Minegishi, an accomplished inventor based in Tokyo, Japan, has made significant contributions to the field of semiconductor technology. His innovative thinking has resulted in the development of a unique semiconductor module which focuses on improving the reliability of semiconductor devices.

Latest Patents

Minegishi holds one notable patent for a semiconductor module that enhances the reliability of a semiconductor device. This invention features a third semiconductor chip that contains a control circuit, connecting a first semiconductor chip, which is part of a group of Insulated Gate Bipolar Transistors (IGBTs), through a high-side relay board. The design also enables connectivity between the third semiconductor chip and a second semiconductor chip from the IGBT group via a low-side relay board. This sophisticated setup optimizes the electrical connections, ultimately improving performance and reliability.

Career Highlights

Hirobumi Minegishi currently works at Renesas Electronics Corporation, a leading company in the semiconductor industry. His position allows him to collaborate with other talented professionals and contribute to cutting-edge developments in semiconductor technology.

Collaborations

Throughout his career, Minegishi has worked alongside esteemed colleagues, including Kuniharu Muto and Koji Bando. Their collective expertise fosters an environment of innovation and collaboration, allowing for groundbreaking advancements in semiconductor applications.

Conclusion

Hirobumi Minegishi's inventive spirit shines through his patent for a semiconductor module that significantly enhances device reliability. As a key player at Renesas Electronics Corporation, he continues to pave the way for innovations in semiconductor technology, influencing the future of the industry with his groundbreaking work.

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