Mukou, Japan

Hiroaki Uozumi


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Mukou, JP (2003)
  • Kyoto, JP (2003)

Company Filing History:


Years Active: 2003

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2 patents (USPTO):Explore Patents

Title: Hiroaki Uozumi: Innovator in Semiconductor Technology

Introduction

Hiroaki Uozumi is a notable inventor based in Mukou, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative designs that enhance the functionality and efficiency of semiconductor devices.

Latest Patents

Uozumi's latest patents include a semiconductor device featuring a heat detecting element and an insulating cavity. This invention provides a semiconductor device that consists of a silicon substrate, a heat insulating layer made of silicon oxide film, and a heat detecting portion. The heat insulating layer is designed with a closed cavity and/or a hole, where the interior of the hole has a greater diameter than its opening. Additionally, at least a portion of the closed cavity or the hole is formed within the silicon oxide film. Uozumi also outlines a method for manufacturing this advanced semiconductor device.

Career Highlights

Throughout his career, Hiroaki Uozumi has worked with prominent companies, including Matsushita Electric Industrial Co., Ltd. His experience in the industry has allowed him to develop innovative solutions that address the challenges faced in semiconductor technology.

Collaborations

Uozumi has collaborated with notable colleagues such as Hiroyoshi Komobuchi and Yoshikazu Chatani. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Hiroaki Uozumi's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient semiconductor devices.

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