Yamagata, Japan

Hiroaki Sato


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Hiroaki Sato: Innovator in CVD-SiC Membrane Technology

Introduction

Hiroaki Sato is a prominent inventor based in Yamagata, Japan. He has made significant contributions to the field of materials science, particularly in the development of self-supporting membrane structures.

Latest Patents

Hiroaki Sato holds a patent for a CVD-SiC self-supporting membrane structure and the method for manufacturing it. This innovative invention features a structure comprising multiple SiC layers that are laminated using a chemical vapor deposition (CVD) method. The design includes a layer A with a peak intensity ratio of β(220) to β(111) of 0.1 or more, and a layer B with a peak intensity ratio of 0.01 or less, which are alternately and repeatedly laminated, with layer A positioned on either side in the thickness direction.

Career Highlights

Hiroaki Sato is associated with Toshiba Ceramics Co., Ltd., where he has been instrumental in advancing ceramic technologies. His work has garnered attention for its innovative approach to material structures.

Collaborations

Hiroaki Sato has collaborated with Shuichi Takeda, contributing to the development of advanced materials and technologies.

Conclusion

Hiroaki Sato's contributions to the field of CVD-SiC membrane technology highlight his innovative spirit and dedication to advancing material science. His work continues to influence the industry and pave the way for future innovations.

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