Yokkaichi, Japan

Hiroaki Namba

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Sandisk Technologies Inc.. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroaki Namba. Retrieved from https://idiyas.com/inventor/hiroaki-namba-vzqp8j9m

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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2 patents (USPTO):Explore Patents

Title: Hiroaki Namba: Innovator in Semiconductor Technology

Introduction

Hiroaki Namba is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced memory devices. With a total of 2 patents, Namba's work has been instrumental in pushing the boundaries of memory storage solutions.

Latest Patents

Namba's latest patents include innovative designs for three-dimensional memory devices. The first patent describes a three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same. This semiconductor structure features an alternating stack of insulating layers and electrically conductive layers located on the front side of at least one semiconductor material layer. Memory openings vertically extend through the alternating stack, and a dielectric material portion contacts the sidewalls of the insulating layers. A connection via structure can vertically extend through the dielectric material portion, with a metal plate contacting the connection via structure.

The second patent focuses on a three-dimensional memory device with punch-through-resistant word lines and methods for forming the same. This invention includes an alternating stack of insulating layers and electrically conductive layers, along with a retro-stepped dielectric material portion overlying stepped surfaces of the alternating stack. Memory stack structures extend through the alternating stack, and a patterned etch mask layer with discrete openings is formed above. The process involves creating via cavities through the retro-stepped dielectric material portion while protecting underlying electrically conductive layers with selectively formed metal plates.

Career Highlights

Hiroaki Namba is currently employed at Sandisk Technologies Inc., where he continues to innovate in the semiconductor industry. His work has garnered attention for its potential to enhance memory device performance and reliability.

Collaborations

Namba collaborates with talented individuals in his field, including Ryo Mochizuki and Yasuo Kasagi. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Hiroaki Namba's contributions to semiconductor technology through his innovative patents highlight his role as a leading inventor in the industry. His work continues to influence the development of advanced memory devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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