This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2003.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 834,601 Years Active: 2003
Title: Hiroaki Himi: Innovator in Semiconductor Technology
Introduction
Hiroaki Himi is a notable inventor based in Kariya, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.
Latest Patents
Himi holds a patent for a "Method for manufacturing a semiconductor device having lateral MOSFET (LDMOS)." This invention involves an LDMOS where an n-type region is formed with a concentration higher than that of an n-type substrate. The concentration of this region gradually increases from the n-type substrate to the n-type drain region, surrounding the n-type drain region. Additionally, a p-type contact region is formed adjacent to an n-type source region, extending below the n-type source region. This design minimizes the likelihood of a parasitic transistor being turned ON, enhancing the device's performance.
Career Highlights
Throughout his career, Hiroaki Himi has focused on advancing semiconductor technologies. His work has been instrumental in improving the efficiency and reliability of semiconductor devices.
Collaborations
Himi has collaborated with notable colleagues such as Shigeki Takahashi and Satoshi Shiraki. Their combined expertise has contributed to the success of various projects in the semiconductor field.
Conclusion
Hiroaki Himi's innovative work in semiconductor technology, particularly his patent on LDMOS, showcases his commitment to advancing the industry. His contributions continue to influence the development of efficient semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile