Company Filing History:
Years Active: 2005
Title: Innovations by Hing Ho Au in Semiconductor Technology
Introduction
Hing Ho Au is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has developed innovative methods that enhance the efficiency of silicon oxide films used in various applications. His work is particularly significant in the field of materials science and engineering.
Latest Patents
Hing Ho Au holds a patent for a method titled "Method for depositing a very high phosphorus doped silicon oxide film." This invention involves a thermal activated SACVD method for depositing a phosphorus oxide layer onto a silicon oxide wafer. The process includes several steps: loading an SACVD device with a silicon oxide wafer, depositing a phosphorus doped oxide (PSG) layer on the USG layer using pure oxygen and a phosphorus and silicon source, purging the SACVD device, and finally depositing a boron and phosphorus doped oxide (BPSG) layer on the PSG layer. This patent showcases his expertise in semiconductor fabrication techniques.
Career Highlights
Hing Ho Au is currently employed at Tech Semiconductor Singapore Pte Ltd, where he applies his knowledge and skills in semiconductor manufacturing. His role involves working on advanced technologies that contribute to the development of high-performance electronic devices. His innovative approach has made a significant impact on the company's research and development efforts.
Collaborations
Hing Ho Au collaborates with talented professionals in his field, including coworkers Jian Sun and Yew Hoong Phang. Together, they work on various projects that push the boundaries of semiconductor technology and improve manufacturing processes.
Conclusion
Hing Ho Au's contributions to the field of semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to shape advancements in the industry, making a lasting impact on technology and innovation.