Hong Kong, China

Hin Koon Woo


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1999

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Hin Koon Woo in Heteroepitaxial Growth

Introduction

Hin Koon Woo is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of materials science, particularly in the growth of beta silicon carbide films. His innovative approach has led to advancements in semiconductor technology.

Latest Patents

Hin Koon Woo holds 1 patent for his work titled "Method of heteroepitaxial growth of beta silicon carbide on silicon." This patent describes a method and apparatus developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus utilizes a graphite plate as the carbon source and a silicon substrate as the silicon source, with hydrogen being the only feeding gas to the system.

Career Highlights

Hin Koon Woo is affiliated with the City University of Hong Kong, where he continues to engage in research and development in his field. His work has been instrumental in enhancing the understanding and application of silicon carbide in various technological domains.

Collaborations

Hin Koon Woo has collaborated with notable colleagues, including Shuit Tong Lee and Chun Sing Lee. Their combined efforts have contributed to the advancement of research in semiconductor materials.

Conclusion

Hin Koon Woo's innovative methods in the growth of beta silicon carbide films represent a significant advancement in semiconductor technology. His contributions continue to influence the field and inspire future research endeavors.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…