The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Aug. 13, 1997
Applicant:
Inventors:
Shuit Tong Lee, Hong Kong, HK;
Chun Sing Lee, Hong Kong, HK;
Bello Igor, Hong Kong, HK;
Yat Wah Lam, Hong Kong, HK;
Hin Koon Woo, Hong Kong, HK;
Assignee:
City University of Hong Kong, , HK;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 88 ; 1187 / ; 118725 ; 118724 ; 117108 ; 117951 ;
Abstract
A method and an apparatus have been developed to deposit heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus includes a graphite plate as the carbon source and the silicon substrate as the silicon source. Hydrogen was the only feeding gas to the system.
Lee, Shuit. (1999). Method of heteroepitaxial growth of beta silicon carbide on silicon (U.S. Patent No. 5879450). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5879450
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile