Company Filing History:
Years Active: 1999
Title: Innovations of Bello Igor in Heteroepitaxial Growth
Introduction
Bello Igor is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of materials science, particularly in the growth of beta silicon carbide films. His innovative approach has led to the development of a unique method that enhances the efficiency of semiconductor manufacturing.
Latest Patents
Bello Igor holds a patent for a method titled "Method of heteroepitaxial growth of beta silicon carbide on silicon." This patent describes a method and apparatus for depositing heteroepitaxial beta-silicon carbide films on silicon using bias-assisted hot filament chemical vapor deposition (BA-HFCVD). The apparatus utilizes a graphite plate as the carbon source and a silicon substrate as the silicon source, with hydrogen being the sole feeding gas to the system. He has 1 patent to his name.
Career Highlights
Bello Igor is affiliated with the City University of Hong Kong, where he continues to advance his research in semiconductor materials. His work has garnered attention for its potential applications in various electronic devices, making him a valuable asset to the academic community.
Collaborations
Bello has collaborated with esteemed colleagues such as Shuit Tong Lee and Chun Sing Lee. Their combined expertise has contributed to the advancement of research in the field of heteroepitaxial growth.
Conclusion
Bello Igor's innovative methods in the growth of beta silicon carbide films represent a significant advancement in semiconductor technology. His contributions are poised to impact the future of electronic device manufacturing.