Company Filing History:
Years Active: 1982
Title: Hikou Shibayama: Innovator in Plasma Etching Technology
Introduction
Hikou Shibayama is a notable inventor based in Machida, Japan. He has made significant contributions to the field of semiconductor processing, particularly through his innovative patent related to plasma etching technology. His work has implications for the efficiency and effectiveness of semiconductor manufacturing.
Latest Patents
Hikou Shibayama holds a patent for a "Method and apparatus for plasma etching." This invention involves a method and apparatus designed for plasma etching semiconductor materials. It features an intermediate electrode positioned between the electrodes in a parallel state type plasma etching apparatus. The invention allows for the movement of the intermediate electrode via a drive mechanism, enabling a continuous transition from high input power and high self-bias voltage to low input power and low self-bias voltage. This process varies the distance between the intermediate electrode and the first electrode, as well as the RF power, effectively removing damage or deposits that may form on the surface during semiconductor processing. He has 1 patent to his name.
Career Highlights
Hikou Shibayama is associated with Fujitsu Corporation, where he applies his expertise in semiconductor technology. His role at Fujitsu has allowed him to contribute to advancements in the field, particularly in improving manufacturing processes.
Collaborations
Hikou has worked alongside notable colleagues such as Tetsuya Ogawa and Makoto Kosugi. Their collaborative efforts have furthered research and development in semiconductor technologies.
Conclusion
Hikou Shibayama's contributions to plasma etching technology exemplify the importance of innovation in semiconductor manufacturing. His patent reflects a significant advancement that enhances the processing of semiconductor materials.