The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1982
Filed:
May. 11, 1981
Hikou Shibayama, Machida, JP;
Tetsuya Ogawa, Machida, JP;
Makoto Kosugi, Yokohama, JP;
Tokushige Hisatsugu, Chofu, JP;
Koichi Kobayashi, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.