Hirakata, Japan

Hideyuki Iwata


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Innovations by Hideyuki Iwata

Introduction

Hideyuki Iwata is a notable inventor based in Hirakata, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of semiconductor memory devices.

Latest Patents

Iwata holds a patent for a semiconductor memory device having a trench-stacked capacitor. This innovative device includes a capacitor and an insulating separation area in a trench formed around a switching transistor. The design features a storage electrode of the capacitor sandwiched between an upper and a lower cell plate electrode. This configuration effectively reduces leakage current due to the parasitic MOS transistor effect in the trench sidewall along the channel in the switching transistor. Additionally, it minimizes leakage current due to the gate-controlled diode effect in the trench sidewall. A method for manufacturing such a semiconductor memory device is also disclosed in his patent.

Career Highlights

Iwata is associated with Matsushita Electric Industrial Co., Ltd., a leading company in the electronics industry. His work at Matsushita has allowed him to contribute to advancements in semiconductor technology.

Collaborations

Iwata has collaborated with notable colleagues, including Mitsuo Yasuhira and Takatoshi Yasui. Their combined expertise has furthered the development of innovative technologies in their field.

Conclusion

Hideyuki Iwata's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a significant inventor in the industry. His work continues to influence advancements in memory devices and semiconductor efficiency.

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