Hideyoshi Horie

Title: Innovations of Hideyoshi Horie in Nitride Semiconductors

Introduction

Hideyoshi Horie is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of nitride semiconductors, holding a total of 16 patents. His work focuses on enhancing the efficiency of light-emitting elements through innovative semiconductor designs.

Latest Patents

One of Horie's latest patents involves a nitride semiconductor designed to ensure high emission efficiency of light-emitting elements. This invention details a method of obtaining a nitride semiconductor by stacking different conductivity types of nitride semiconductor parts along with a quantum well active layer structure. The crystal growth occurs on a base with a nonpolar principal nitride surface, which helps prevent the spatial separation of electrons and holes, thus realizing efficient radiation. Another patent outlines a nitride semiconductor crystal growth method that involves preparing a base with a principal nitride plane for epitaxial growth, ensuring optimal conditions for the growth of the semiconductor layers.

Career Highlights

Horie has worked with notable companies such as Mitsubishi Chemical Corporation and Mitsubishi Gas Chemical Company, Inc. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Horie has collaborated with talented individuals in his field, including Toshinari Fujimori and Kaori Kurihara. These collaborations have likely fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Hideyoshi Horie's contributions to nitride semiconductor technology demonstrate his innovative spirit and commitment to advancing the field. His patents reflect a deep understanding of semiconductor physics and a dedication to improving light-emitting technologies.