The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Mar. 18, 2005
Hideyoshi Horie, Ushiku, JP;
Hideyoshi Horie, Ushiku, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
A semiconductor laser having an oscillation wavelength λ (nm) and comprising at least a substrate, a first-conduction-type clad layer having an average refractive index N, an active layer structure having an average refractive index N, and a second-conduction-type clad layer having an average refractive index N. This has a first-conduction-type subwave guide layer having an average refractive index Nbetween the substrate and the first-conduction-type clad layer, and has a first-conduction-type low-refractive-index layer having an average refractive index Nbetween the subwaveguide layer and the substrate. In this, the refractive indexes satisfy specific relational formulae. The semiconductor laser has a stable oscillation wavelength against the change of current/light output/temperature.