Company Filing History:
Years Active: 2024
Title: The Innovations of Hideto Yanagihara
Introduction
Hideto Yanagihara is a notable inventor based in Tsukuba, Japan. He has made significant contributions to the field of magnetoresistive memory devices. His work has led to advancements in technology that are essential for modern electronic devices.
Latest Patents
Yanagihara holds a patent for a magnetic tunnel junction element and a magnetoresistive memory device. This invention includes a fixed layer that maintains a magnetization direction, an insulating layer, a free layer with a variable magnetization direction, and an antiferromagnetic oxide layer. The design allows for the fixed layer, free layer, and antiferromagnetic oxide layer to be sequentially stacked, with the free layer and antiferromagnetic oxide layer in direct contact with each other. He has 1 patent to his name.
Career Highlights
Hideto Yanagihara is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate and develop new technologies. His work at Samsung has positioned him as a key player in the advancement of memory devices.
Collaborations
Yanagihara collaborates with various professionals in his field, including his coworker Yoshiaki Sonobe. Their combined expertise contributes to the development of cutting-edge technologies in the electronics industry.
Conclusion
Hideto Yanagihara's contributions to the field of magnetoresistive memory devices highlight his innovative spirit and dedication to advancing technology. His work continues to influence the electronics industry significantly.
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