The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Oct. 11, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yoshiaki Sonobe, Fujisawa, JP;
Hideto Yanagihara, Tsukuba, JP;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a magnetic tunnel junction element and a magnetoresistive memory device. The magnetic tunnel junction element includes a fixed layer maintaining a magnetization direction, an insulating layer, a free layer having a variable magnetization direction, and an antiferromagnetic oxide layer. The fixed layer, the free layer, and the antiferromagnetic oxide layer may be sequentially stacked. The free layer and the antiferromagnetic oxide layer may be in direct contact with each other.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile