Aichi, Japan

Hideto Morimoto

This inventor holds 1 USPTO granted patent. Top assignee: Nippondenso Co., Ltd.. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideto Morimoto. Retrieved from https://idiyas.com/inventor/hideto-morimoto-trk7pm8o

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hideto Morimoto

Introduction

Hideto Morimoto is a notable inventor based in Aichi, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and cost-effectiveness of semiconductor devices.

Latest Patents

Morimoto holds a patent for a semiconductor device with a nickel alloy protective resistor. This innovative device includes a substrate, a semiconductor element formed on the substrate, a terminal electrically connected to the semiconductor element, and a protective resistor. The resistor is composed of a ferromagnetic magnetoresistive material that includes a nickel alloy. This design allows for improved anti-noise characteristics and integration, making it a valuable advancement in the field.

Career Highlights

Morimoto is associated with Nippondenso Co., Ltd., where he has contributed to various projects and innovations. His expertise in semiconductor technology has positioned him as a key figure in the industry.

Collaborations

He has worked alongside talented colleagues such as Yoshimi Yoshino and Kenichi Ao, contributing to the development of cutting-edge technologies.

Conclusion

Hideto Morimoto's work in semiconductor devices exemplifies innovation and dedication to advancing technology. His contributions continue to impact the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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