Company Filing History:
Years Active: 2000
Title: Hideo Nagasawa: Innovator in Semiconductor Manufacturing
Introduction
Hideo Nagasawa is a prominent inventor based in Ohme, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative methods that enhance device performance.
Latest Patents
Nagasawa holds a patent for a "Method of manufacturing semiconductor device." This method enables control of impurity concentration and fine patterning by making the removal of residual stress due to LOCOS oxidation compatible with the formation of deep wells. A selective oxide layer is formed to separate element regions on a principal plane of a semiconductor substrate, such as a p.sup.- -type silicon substrate. The process involves forming a mask on the surface, introducing impurities of a conductivity type opposite that of the semiconductor substrate, and annealing the selective oxide film through high-temperature treatment while forming a deep well by introducing the impurities. He has 1 patent to his name.
Career Highlights
Nagasawa is associated with Texas Instruments Corporation, where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the manufacturing processes that are crucial for modern electronic devices.
Collaborations
Throughout his career, Nagasawa has collaborated with notable colleagues, including Yuji Ezaki and Shinya Nishio. These partnerships have fostered innovation and development in semiconductor technologies.
Conclusion
Hideo Nagasawa's contributions to semiconductor manufacturing highlight his role as an influential inventor in the field. His innovative methods continue to impact the industry positively.