Ehime, Japan

Hideki Morikawa

This inventor holds 1 USPTO granted patent. Top assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.. Active years: 2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hideki Morikawa. Retrieved from https://idiyas.com/inventor/hideki-morikawa-v0a90m2f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2019

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Hideki Morikawa

Introduction

Hideki Morikawa is a notable inventor based in Ehime, Japan. He has made significant contributions to the field of ion implantation technology. His work has led to advancements that enhance the efficiency and effectiveness of ion beam applications.

Latest Patents

Morikawa holds a patent for an "Ion implantation method and ion implantation apparatus." This innovative method involves measuring the beam energy of an ion beam generated by a high-energy multistage linear acceleration unit. The process includes adjusting the high-frequency parameter based on the measured beam energy, which allows for optimized ion implantation.

Career Highlights

Morikawa is associated with Sumitomo Heavy Industries Ion Technology Co., Ltd., where he applies his expertise in ion implantation technology. His work has been instrumental in developing methods that improve the performance of ion beams in various applications.

Collaborations

He has collaborated with notable colleagues such as Hiroyuki Kariya and Masaki Ishikawa. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hideki Morikawa's contributions to ion implantation technology exemplify the impact of innovative thinking in engineering. His patent and collaborative efforts continue to influence advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…