Nagaokakyo, Japan

Hidekazu Tamura

This inventor holds 1 USPTO granted patent. Top assignee: Murata Manufacturing Co., Ltd.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hidekazu Tamura. Retrieved from https://idiyas.com/inventor/hidekazu-tamura-n6ifdnwm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Hidekazu Tamura: Multilayer Electronic Component Innovation

Introduction

Hidekazu Tamura is an inventor based in Nagaokakyo, Japan, associated with Murata Manufacturing Co., Ltd. His patent work addresses the design and manufacture of multilayer electronic components.

Latest Patents

Tamura is associated with 1 patent: “Multilayer Electronic Component and Method for Manufacturing Multilayer Electronic Component.” The invention describes a multilayer body made of dielectric layers and inner electrode layers, with opposing electrodes separated by dielectric material. It specifies minimum dimensions for the component and dielectric layers containing barium, titanium, and chlorine. The patent also defines chlorine concentration ranges across the electrode-facing portion, including its central and end regions.

Career Highlights

Tamura’s documented patent contribution focuses on controlling material composition and chlorine distribution in multilayer electronic components. These specifications relate to both the component’s structure and its manufacturing method.

Collaborations

Hisashi Fujii and Yoshito Saito are identified as Tamura’s coworkers. The available information does not specify their roles in the patent.

Conclusion

Hidekazu Tamura’s patent work at Murata Manufacturing Co., Ltd. centers on the composition, structure, and manufacture of multilayer electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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